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K6R1008C1B-I12 Datasheet, Samsung semiconductor

K6R1008C1B-I12 Datasheet, Samsung semiconductor

K6R1008C1B-I12

datasheet Download (Size : 169.67KB)

K6R1008C1B-I12 Datasheet

K6R1008C1B-I12 ranges. equivalent, 128kx8 bit high speed static ram5v operating/ revolutionary pin out. operated at commercial and industrial temperature ranges..

K6R1008C1B-I12

datasheet Download (Size : 169.67KB)

K6R1008C1B-I12 Datasheet

Features and benefits


* Fast Access Time 8,10,12ns(Max.)
* Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating K6R1008C1B-8 : 160mA(Max.) K6R1008C1B-10 : 155.

Application

The K6R1008C1B is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. ORDERING INFORMATION K6R1008C1B-C8/C10/C12.

Description

The K6R1008C1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008C1B uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cyc.

Image gallery

K6R1008C1B-I12 Page 1 K6R1008C1B-I12 Page 2 K6R1008C1B-I12 Page 3

TAGS

K6R1008C1B-I12
128Kx8
Bit
High
Speed
Static
RAM5V
Operating
Revolutionary
Pin
out.
Operated
Commercial
and
Industrial
Temperature
Ranges.
Samsung semiconductor

Manufacturer


Samsung semiconductor

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